We report discovery of new method to transfer a single crystal silicon thin film onto a bendable polymer substrate by using layer transfer process. The method includes creation of mechanically weakened layer 100 nm - 600 nm below the Si wafer surface using boron and hydrogen ion implantations. Silicon mother wafer is then pre-bonded to glass and exfoliated. Exfoliation divides the glass-silicon assembly into weakly bound Si thin film on glass and leftover mother Si wafer. Then the silicon thin film was transferred from glass substrate into a polymer substrate.
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Apr 14, 2020
Apr 7, 2020
With larger diameter Czochralski‐grown silicon crystals an increase in the oxygen content is observed. Oxygen in excess of the solubility limit will precipitate resulting in bulk crystal defects which can modify gettering of impurities known to degrade electrical characteristics. In this study we have investigated crystal growth parameters and related them to the properties of the crystal. Wafers were processed from crystals grown under various conditions. Defect formation was evaluated as a function of processing and related to the crystal properties. By growing 2 in. diam crystals at high seed rotation rates so as to maximize the oxygen content, we were able to suppress saucer etch pit formation and epitaxial stacking fault formation. The high oxygen content crystals behaved in the same manner as 3 in. diam crystals with respect to defect formation.