We have studied the near-infrared
photoluminescence properties of free-standing germanium nano-crystals (20 nm on
average) and micro-crystals (60 µm on average) at 80–300 K. Two peaks were
observed at ~1.0 and ~1.4 eV from both the nano- and micro-crystals. The
integrated PL (IPL) intensity of the nano-crystals is about an order of
magnitude stronger than that of the micro-crystals and the IPL is also enhanced
by ageing in air for both crystals. The ~1.0 eV peak position does not change
with either the crystal size or temperature. We suggest that the deep traps
located at the interfacial region between the surface GeO2 layer and the bulk
crystal Ge is responsible for the near-infrared PL.
Source:IOPscience
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