Laser optoacoustic method for quantitative nondestructive evaluation of the subsurface damage depth in ground silicon wafers

This paper is a report on the novel laser optoacoustic method for nondestructive evaluation of the depth of the subsurface damage in ground single-crystal silicon wafers. It is based on different mechanisms of laser excitation of ultrasound by absorption of Q-switched Nd:YAG laser pulses at the fundamental wavelength: the concentration-deformation mechanism in the undamaged single-crystal silicon and the thermoelastic one in the subsurface damaged layer. Due to the uniform heating of the whole damaged layer during the laser pulse action the amplitude of the compression phase of the laser-induced ultrasonic signal is proportional to the damaged depth. The rarefaction phase of this signal arises by absorption of the remaining laser energy in the single-crystal silicon beneath the damaged layer. The empirical relation between the depth of the subsurface damage and the ratio of the amplitudes of compression and rarefaction phases of the laser-induced ultrasonic signal can be fitted by a linear function within the depth variation and the corresponding spread of the signal amplitudes. The proposed method attracts some interest for in situ control of the solid surface condition that is important in different tasks of linear and nonlinear optics.

Source:IOPscience

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Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

Source:IOPscience

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