Crystal Wafer: July 2018

Jul 23, 2018

Continuous Wave and Q-Switched Mode-Locking of a Nd:YVO4 Laser with a Single Crystal GaAs Wafer

We realized both continuous wave (CW) and Q-switched mode-locking in a diode-pumped Nd:YVO4 laser by using a single crystal GaAs wafer as the saturable absorber as well as an output coupler. The GaAs wafer was coated to have a continuously variable reflectivity and the laser intensity within the GaAs saturable absorber can be changed by simply translating the GaAs wafer. CW mode-locked pulses of 1.5 W average power and 31 ps duration were generated at 154 MHz repetition rate. For Q-switched mode-locking, the repetition rate and pulse duration of the Q-switched pulses were 133–300 kHz and 100–350 ns, respectively.

Source:IOPscience

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Jul 1, 2018

Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning

It is clarified that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process. Such singularities are perceived by laser particle counters as small particles on wafers. It is shown that the singularities correspond to small shallow pits caused by the etching effect of the SC1 cleaning solution. The origin of the pits is presumed to be some kind of defect in the melt-grown crystals.