Etching Characterization of {001} Semi-Insulating GaAs Wafers

The characteristics of {001} semi-insulating GaAs wafers have been investigated by the etching/optical microscopy. New etch features such as groove have been revealed in only LEC crystals together with ridge features by an AB etch, but not in boat-grown crystals. The groove features are specifically revealed on gathering and twisting dislocations such as cell or lineage structures, and coincide with each dislocation lying near the surface. Small pits along the ridge features have been revealed in undoped LEC crystal, but not in undoped boat grown crystals. The distribution of the ridge features with the small pits correlates with that of 0.80 eV photoluminescence intensity in the wafer.

Source:IOPscience

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Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers

It was recently revealed that singularities (crystal-originated "particles") formed on Si wafers after SC1 cleaning originate from some defects in crystals and were perceived by laser particle counters. In this paper, the size distribution of crystal-originated "particles" is examined in detail by means of repeated SC1 cleanings. It is shown that, as the crystal pulling rate becomes faster, the size distribution of crystal-originated "particles" shifts toward smaller size, and the total number of origins of crystal-originated "particles" increases.

Source:IOPscience

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send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com