The thickness uniformity of an quartz crystal wafer is an essential requirement for improving the productivity of a quartz resonator because it prevents frequency adjustment after dicing the wafer. In this paper, chemical finishing utilizing a localized atmospheric pressure plasma is proposed to correct the thickness deviation of a quartz crystal wafer. In this process, free figuring without mask patterning can be realized by the numerically controlled scanning of a localized removal area. The thickness uniformity of a commercially available quartz wafer is improved from 250 to 50 nm only by one correction without subsurface damage.
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