Prospects for the synthesis of large single-crystal diamonds

Abstract

The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates.

Source:IOPscience

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Improving self-assembly quality of colloidal crystal guided by statistical design of experiments

Abstract

A versatile and reliable approach is created to fabricate wafer-scale colloidal crystal that consists of a monolayer of hexagonally close-packed polystyrene (PS) spheres. Making wafer-scale colloidal crystal is usually challenging, and it lacks a general theoretical guidance for experimental approaches. To obtain the optimal conditions for self-assembly, a systematic statistical design and analysis method is utilized here, which applies the pick-the-winner rule. This new method combines spin-coating and thermal treatment, and introduces a mixture of glycol and ethanol as a dispersion system to assist self-assembly. By controlling the parameters of self-assembly, we improve the quality of colloidal crystal and reduce the effect of noise on the experiment. To our best knowledge, we are first to pave this path to harvest colloidal crystals. Importantly, a theoretical analysis using an energy landscape base on our process is also developed to provide insights into the PS spheres' self-assembly.

Keywords:Crystal wafer,

Source:IEEE

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Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method

Abstract

The characteristics of structural defects observed on (100) wafers in β-Ga2O3 single crystals grown by directional solidification in a vertical Bridgman furnace were studied in terms of crystal growth conditions. No high-dislocation-density regions near the wafer periphery were observed owing to the lack of adhesion between the as-grown crystal ingot surface and the crucible inner wall, and directional solidification growth in a crucible with a very low temperature gradient resulted in β-Ga2O3 single crystals with a low mean dislocation density of 2.3 × 103 cm−2. Line-shaped defects up to 150 µm long in the [010] direction were detected at a mean density of 0.5 × 102 cm−2, which decreased with decreasing growth rate. The line-shaped defect structure and formation mechanism were discussed.

Keywords:single crystals,β-Ga2O3,

Source: iopscience

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Diamond turning of small Fresnel lens array in single crystal InSb

Abstract

A small Fresnel lens array was diamond turned in a single crystal (0 0 1) InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors.

Keywords:single crystal,

Source:Iopscience

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