A study is carried out to understand the temperature dependent
non-linear behaviour of PZT wafers under electrical and mechanical loading.
Experiments are conducted on PZT wafers at room and elevated temperatures under
a high cyclic electric field to examine their behaviour. Experimental
characterization is also extended to pure mechanical loading (uni-axial
compressive stress) condition at room and elevated temperatures. A temperature
dependent micro-mechanical model is proposed based on internal energy to
evaluate the ferrolectric and ferroelastic behaviour of PZT wafer. The developed
model is incorporated into a 3D finite element framework and numerical
simulations are performed. The simulated results for electrical loading are
compared with experimental observations which show a significant decrease in
dielectric response at elevated temperature and it is also observed that the
operating temperature influences the electrical displacement and strain along
poling direction (thickness direction) under mechanical loading. A parametric
study has also been conducted to understand the performance of PZT wafer in
which macro-state variables such as remnant polarization, remnant strain,
maximum polarization, and maximum strain are extracted and discussed as a
function of temperature.
Keywords: PZT wafers; Electrical loading; Mechanical loading; Internal energy based switching
criteria
Source: Sciencedirect
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