Single crystal diamond wafers for high power electronics
Presentation of a clear target for the R&D of diamond wafer for power electronics application.
Required target properties for first stage diamond wafers are; a killer defect density less than 0.1cm-2, resistivity less than 0.005Ωcm and a size of 4 inch.
For the final commercialization stage, targets of zero killer defects, resistivity of 0.001Ωcm and a size of 6 inch size are proposed.
According to international energy proposal, about 25% of the total CO2 reduction should come from “end use efficiency”. Hence, low loss power devices are an important technology for the 21st century. Diamond-based devices have the potential, but this would require fast development in order to contribute to the CO2 reduction plan early in this century. Here, we present a clear target for the R&D of diamond wafer. According to the expected applications of diamond devices with a vertical structure, the required target properties for first stage diamond wafers are; a killer defect density less than 0.1 cm− 2, resistivity less than 0.005 Ω cm and a size of 4 in. For the final commercialization stage, targets of zero killer defects, resistivity of 0.001 Ω cm and a size of 6 in. are proposed. The challenges and proposal solutions are reviewed for each technology.
Single crystal diamond;
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