Nondestructive techniques of mapping of residual strain,
photoluminescence and resistivity were utilized to optimize the multiple wafer annealing
(MWA) procedure of undoped or slightly Fe doped InP crystal wafers under
phosphorous atmosphere. The annealing procedure optimized did not additionally
produce unwanted residual strain but reduced and homogenized it. In conclusion,
MWA has proved to be a promising method to obtain semi-insulating InP crystals without
undesired high Fe doping
Source:IEEE
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