A reproducible process is described for growing a thick single‐crystal layer of cubic SiC on a single‐crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 μm thick and several cm2 in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafersindicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 cm2/Vs.