A reproducible process is
described for growing a thick single‐crystal layer of cubic SiC on a single‐crystal Si wafer by chemical vapor
deposition. A buffer layer, grown in situ, is used between the cubic SiC and
the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34
μm thick and several cm2 in area have been grown. Wafers are
obtained by chemically removing the Si substrates from the grown layers.
Excellent electron channeling patterns produced by these wafers indicate
very good crystal quality. Preliminary electrical measurements have
yielded electron mobilities up to 380 cm2/Vs.
Source:IEEE
If you need more information about Production
of large‐area single‐crystal wafers of cubic SiC for
semiconductor devices, please visit our website:http://www.powerwaywafer.com,
send us email at powerwaymaterial@gmail.com.
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