It was demonstrated that Fe–N martensite (α′) films were
grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by
using a facing target sputtering method. X-ray diffraction pattern implies an
increasing c lattice constant as the N concentration increases in the films.
Partially ordered Fe16N2 films were synthesized after in situ
post-annealing the as-sputtered samples with pure Fe8N phase. Multiple
characterization techniques including XRD, XRR, TEM, and AES were used to
determine the sample structure. The saturation magnetization of films with pure
Fe8N phase measured by VSM was evaluated in the range of 2.0–2.2 T. The post
annealed films show systematic and dramatic increase on the saturation
magnetization, which possess an average value of 2.6 T. These observations
support the existence of giant saturation magnetization in α″-Fe16N2 phase
that is consistent with a recent proposed cluster-atom model and the first
principles calculation.
Source:IEEE
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