We have grown 300 mm silicon single crystals using a 28" hot zone with 200 kg charge size. The mechanical strength of silicon seeds was tested and a new style seed and chuck were developed for safer operation. Oxygen concentration and radial gradient (ORG) were controlled to ±2.5 ppma between 33 and 23 ppma and to less than 5% respectively. Crystal originated pit (COP) sizes were less than 0.15 μm. Wire saw technology has been used to slice the 300 mm wafers and the damage layer of the as-cut wafers investigated. The results show that wire sawn wafers have few defects. It has been found that rapid thermal annealing (RTA) can affect COP counts.
If you need more information about 300 mm silicon crystal growth and wafer processing, please visit our website:http://www.powerwaywafer.com, send us email at firstname.lastname@example.org.
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