A reproducible process is
described for growing a thick single‐crystal layer of cubic SiC on a single‐crystal Si wafer by chemical vapor
deposition. A buffer layer, grown in situ, is used between the cubic SiC and
the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34
μm thick and several cm2 in area have been grown. Wafers are
obtained by chemically removing the Si substrates from the grown layers.
Excellent electron channeling patterns produced by these wafersindicate
very good crystal quality. Preliminary electrical measurements have
yielded electron mobilities up to 380 cm2/Vs.
Source:IEEE
If you need more information about Production
of large‐area single‐crystal wafers of cubic SiC for
semiconductor devices, please visit our website:http://www.powerwaywafer.com,
send us email at powerwaymaterial@gmail.com.
A reproducible process is
described for growing a thick single‐crystal layer of cubic SiC on a single‐crystal Si wafer by chemical vapor
deposition. A buffer layer, grown in situ, is used between the cubic SiC and
the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34
μm thick and several cm2 in area have been grown. Wafers are
obtained by chemically removing the Si substrates from the grown layers.
Excellent electron channeling patterns produced by these wafers indicate
very good crystal quality. Preliminary electrical measurements have
yielded electron mobilities up to 380 cm2/Vs.
Source:IEEE
It was demonstrated that Fe–N martensite (α′) films were
grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by
using a facing target sputtering method. X-ray diffraction pattern implies an
increasing c lattice constant as the N concentration increases in the films.
Partially ordered Fe16N2 films were synthesized after in situ
post-annealing the as-sputtered samples with pure Fe8N phase. Multiple
characterization techniques including XRD, XRR, TEM, and AES were used to
determine the sample structure. The saturation magnetization of films with pure
Fe8N phase measured by VSM was evaluated in the range of 2.0–2.2 T. The post
annealed films show systematic and dramatic increase on the saturation
magnetization, which possess an average value of 2.6 T. These observations
support the existence of giant saturation magnetization in α″-Fe16N2 phase
that is consistent with a recent proposed cluster-atom model and the first
principles calculation.
Source:IEEE
If
you need more information about Epitaxial high saturation magnetization FeN
thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target
sputterings, please visit our website:http://www.powerwaywafer.com, send us
email at powerwaymaterial@gmail.com.
It was demonstrated that Fe–N martensite (α′) films were
grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by
using a facing target sputtering method. X-ray diffraction pattern implies an
increasing c lattice constant as the N concentration increases in the films.
Partially ordered Fe16N2 films were synthesized after in situ
post-annealing the as-sputtered samples with pure Fe8N phase. Multiple
characterization techniques including XRD, XRR, TEM, and AES were used to
determine the sample structure. The saturation magnetization of films with pure
Fe8N phase measured by VSM was evaluated in the range of 2.0–2.2 T. The post
annealed films show systematic and dramatic increase on the saturation
magnetization, which possess an average value of 2.6 T. These observations
support the existence of giant saturation magnetization in α″-Fe16N2 phase
that is consistent with a recent proposed cluster-atom model and the first
principles calculation.
Source:IEEE
If
you need more information about Epitaxial high saturation magnetization FeN
thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target
sputterings, please visit our website:http://www.powerwaywafer.com, send us
email at powerwaymaterial@gmail.com.
We have grown 300 mm silicon single crystals using
a 28" hot zone with 200 kg charge size. The mechanical strength of silicon
seeds was tested and a new style seed and chuck were developed for safer
operation. Oxygen concentration and radial gradient (ORG) were controlled to
±2.5 ppma between 33 and 23 ppma and to less than 5% respectively. Crystal originated
pit (COP) sizes were less than 0.15 μm. Wire saw technology has been used to
slice the 300 mm wafers and the damage layer of the as-cut wafers investigated.
The results show that wire sawn wafers have few defects. It has been
found that rapid thermal annealing (RTA) can affect COP counts.
Source:IEEE
Nondestructive techniques of mapping of residual strain,
photoluminescence and resistivity were utilized to optimize the multiple wafer annealing
(MWA) procedure of undoped or slightly Fe doped InP crystal wafers under
phosphorous atmosphere. The annealing procedure optimized did not additionally
produce unwanted residual strain but reduced and homogenized it. In conclusion,
MWA has proved to be a promising method to obtain semi-insulating InP crystals without
undesired high Fe doping
Source:IEEE
High-quality and low cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. There are two approaches for the growth of bulk GaN crystal by the Na flux method. One is to grow thick GaN crystal on a large seed GaN crystal grown by vapor phase method. The other is to grow GaN crystal on a small seed GaN crystal. 3 in diameter GaN crystals were grown on the large GaN seed crystal. In the case of the growth on a small GaN seed, we obtained bulk crystal with a pyramidal shape and its height and diameter were 15 mm and >20 mm, respectively. We also present the effects of the impurity in the solution on the property and growth habit.
Source:
Journal of Crystal Growth
If you need more information about Growth of bulk GaN crystal by Na flux method
under various conditions, please visit our website:http://www.powerwaywafer.com,
send us email at powerwaymaterial@gmail.com.
Defects in commercially available silicon carbide (SiC) wafers have been investigated by X-ray topography and optical microscopy. Dots appearing in transmission topographs are identified as a screw dislocation running through the [0001] direction by a comparative observation of the reflection topographs from the front and rear sides. In the peripheral region, these dots appear with high density and accompany large strain fields at the edge, which are related with the dislocations in the basal plane emanating from the dots and connecting them and large holes with diameters of about 10–20 μm opening at the epilayer surface. These large strain fields are considered to originate from the large Burgers vector associating with the screw dislocations.
Source:
Materials Science and Engineering: B
If you need more information about Reflection and
transmission X-ray topographic study of a SiC crystal and epitaxial wafer, please visit our website:http://www.powerwaywafer.com,
send us email at powerwaymaterial@gmail.com.
