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Feb 18, 2014
Strain profiles and defect structure in 6H–SiC crystals implanted with 2 MeV As+ ions
Highly perfect (00.1) oriented 6H–SiC wafers were implanted with 2 MeV As+ ions to a number of fluencies in the range from 5 × 1012 cm−2 to 1 × 1014 cm−2 and examined with synchrotron X-ray diffraction methods and RBS/channeling method. The X-ray methods included the investigation of rocking curves recorded with a small 50 × 50 μm2 probe beam and white beam Bragg-Case section and projection topography.