Low indium-doped LEC GaAs crystal growth employing thermal stress analysis

Recently, dislocation-free LEC GaAs crystals have been able to be grown by indium doping at the 10²⁰ cm^-3level. However, striations and In inclusions are still problems in In-doped LEC GaAs. We have overcome these problems by reducing the doped In concentration. The ingots have been grown so that the calculated stress value in any part of the ingot may not exceed 0.07 kg/mm², which was the critical resolved shear stress estimated by the thermal stress analysis. Employing this technique under the same growth conditions as those for the low dislocation, (4–5) x 10³ cm^-2 etch pit density, undoped GaAs crystal, dislocation-free 2 inch diameter wafers have been obtained at (1–4) x 10¹⁹ cm^-3 In doping level.

Source:Journal of Crystal Growth

If you need more information about Low indium-doped LEC GaAs crystal growth employing thermal stress analysis, please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.