Low indium-doped LEC GaAs crystal growth employing thermal stress analysis
Recently, dislocation-free LEC GaAs crystals have been able to be grown by indium doping at the 1020 cm-3level. However, striations and In inclusions are still problems in In-doped LEC GaAs. We have overcome these problems by reducing the doped In concentration. The ingots have been grown so that the calculated stress value in any part of the ingot may not exceed 0.07 kg/mm2, which was the critical resolved shear stress estimated by the thermal stress analysis. Employing this technique under the same growth conditions as those for the low dislocation, (4–5) x 103 cm-2 etch pit density, undoped GaAs crystal, dislocation-free 2 inch diameter wafers have been obtained at (1–4) x 1019 cm-3 In doping level.
of Crystal Growth
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