Current—voltage (I—V)
and capacitance—voltage (C—V)
characteristics of Au/p-CZT contacts with different surface treatments on
cadmium zinc telluride (CZT) wafer's surface were measured with Agilent 4339B
high resistance meter and Agilent 4294A precision impedance analyzer,
respectively. The Schottky barrier height was 0.85±0.05, 0.96±0.05 eV for
non-passivated and passivated CZT crystals by I—V measurement. By C—V measurement, the Schottky barrier height was
1.39±0.05, 1.51±0.05 eV for non-passivated and passivated CZT crystals. The
results show that the passivation treatment can increase the barrier height of
the Au/p-CZT contact and decrease the leakage current. The main reason is that
the higher barrier height of Au/p-CZT contacts can decrease the possibility for
electrons to pass through the native TeO2 film. Most of the applied voltage appears on the
depleted layer and there is only a negligible voltage drops across the nearly
undepleted region. Furthermore, the electric field in the depleted layer is not
uniform and can be calculated by the depletion approximation. The maximum
electric field of CZT crystals is Eml=133 V/cm at x=0 for
non-passivated CZT crystal and Em2=55
V/cm for passivated CZT crystal, respectively.
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