We have compared the strain data in GaAs wafers, as-grown as well as annealed, determined by means of the scanning infrared polariscope (SIRP) with data of high-resolution X-ray diffraction (HRXD) and qualitative results of a synchrotron based, single-crystal X-ray transmission topography (SXRTT) study. The in-plane strain component |εr−εt| measured by SIRP throughout the wafer thickness was about 10−5, while it derived from the single components εxx,εyy , and εxy determined by HRXD at a penetrated layer close to the surface was above 10−4. Consequently, we assume that a strong strain gradient exists between the surface and the bulk.
Source:Journal of Crystal Growth
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