Peripheral and central areas of a
semi-insulating 6H-SiC single-crystal wafer were examined using a scanning
laser microscope (SLM) and infrared light-scattering tomography (IR-LST). The
form and density of the defects in each area were observed by SLM. We
reconstructed three-dimensional (3D) IR-LST images of scatterers by stacking 2D
layer-by-layer IR-LST images on different planes. Using these 3D IR-LST images,
variations in the defect distribution with depth were observed for the first
time. To study the defect distribution and defect form in detail, we observed
the defect configuration in the same volume as for 3D IR-LST images by
magnified SLM and merged the images from the two techniques. Information on
defects obtained using this approach will be very important in the development
of high-quality semi-insulating silicon carbide (SiC) substrates.
Source:Journal
of Crystal Growth
If you need more information about Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST), please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.
If you need more information about Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST), please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.
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