We have studied the growth and properties
of SiC films on Si wafers, under ultrahigh vacuum background conditions, using
a remote-, microwave excited, methane plasma as a source of active carbon and
hydrogen, while the Si substrates were held at a temperature of near
700 °C. The reaction is diffusional and should thus be self-limiting, but
it actually reaches up to 20–25 nm thickness due to direct transport of Si
from the substrate to the top surface through initially open defects in the
growing film. These defects gradually fill up during the growth, and the
resulting films have a relatively low density of these, and are otherwise very
uniform and polycrystalline. They are characterized with scanning electron
microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, X-ray
diffraction, and hardness measurements.
Highlights
• Self-limiting SiC film growth on Si
• Methane plasma
• Films of very high quality
Source:Thin
Solid Films
If you need more information about Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas, please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.
If you need more information about Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas, please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.
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